INFOS 2021 will be held as a fully virtual

The INFOS conference is a prestigious biennial event which brings together electrical engineers, technologists, materials scientists, device physicists and chemists from Europe and around the world to debate the newest developments on thin insulating films on semiconductors and identify the challenges ahead in this highly diversifying field.

Conference topics

High-k dielectrics, metal gate materials and SiO2 for future scaling

Gate stack materials for high mobility substrates (e.g. Ge, SiGe, InGaAS)

Materials for non-volatile memories: flash, PCM, RRAM, MRAM

Dielectrics for MIM and DRAM

Low-k dielectrics

2D materials, nanowires and relevant dielectrics

Materials for steep slope devices (e.g. tunnel FETs)

Materials for neuromorphic computing

Physics and chemistry of dielectrics and defects

Modelling of atomic and electronic structure of insulators, interfaces and thin films

Characterization techniques for dielectrics and interfaces

Electrical reliability, leakage and related modelling

Surface cleaning technologies

Ferroelectrics and functional oxides

Dielectrics and thin film materials for TFTs, amorphous or organic devices and photovoltaics

Dielectrics for photonics and sensing

Dielectrics on wide bandgap semiconductors (e.g. GaN, SiC) for power devices

Materials for biomedical micro/nano devices

Steering Committee

  • V. Afanasiev – University of Leuven (Belgium)
  • S. Cristoloveanu – IMEP (France)
  • F. Crupi – University of Calabria (Italy)
  • A. Dimoulas – NCSR Demokritos (Greece)
  • B. Majkusiak – Warsaw University of Technology (Poland)
  • J. Robertson – University of Cambridge (Great Britain)
  • L. Selmi – University of Modena and Reggio Emilia (Italy)

Technical Program Committee

  • M.A. Alam, Purdue University (USA)
  • T. Ando, IBM (USA)
  • C. Dubourdieu, Helmholtz Zentrum Berlin (Germany)
  • J. Franco, imec (Belgium)
  • F. Gamiz, University of Granada (Spain)
  • P. Hurley, Tyndall National Institute (Ireland)
  • D. Ielmini, Politecnico di Milano (Italy)
  • H. Iwai, National Yang Ming Chiao Tung University (Taiwan)
  • H.D. Kim, Sejong University (Korea)
  • K. Kita, University of Tokyo (Japan)
  • C. Leroux, CEA-LETI Grenoble (France)
  • M. Nafria, Universitat Autonoma of Barcelona (Spain)
  • L. Pantisano, Global Foundries (USA)
  • K. L. Pey, SUTD (Singapore)
  • S. Slesazeck, Namlab (Germany)

Local Organizing Committee

  • F. Crupi (General Chair) – University of Calabria
  • M. Lanuzza – University of Calabria
  • R. De Rose – University of Calabria

Invited Talks

Thomas Mikolajick
NaMLab GmbH, Dresden, Germany
20 years of reconfigurable field effect transistors – from concepts to future applications

Elvira Fortunato
NOVA University Lisbon, Lisbon, Portugal
New Challenges of High-к Oxide Dielectrics: from Spin to Large-Scale Device Fabrication

Ru Huang
Peking University, Peking, China
HfO2-based ferroelectric devices for diverse applications

Ming Liu
Institute of Microelectronics of Chinese Academy of Sciences, Peking, China
Ferroelectric HfO2 based memory technology

Debdeep Jena
Cornell University, Ithaca, United States
High performance p-channel GaN/AlN FETs for wide-bandgap CMOS

Nadine Collaert
IMEC, Leuven, Belgium
Compound semiconductor devices for 5G applications and beyond

Veeresh Deshpande
Helmholtz-Zentrum Berlin, Berlin, Germany
CMOS back-end compatible ferroelectric tunnel junction devices

Lis Nanver
University of Twente, Twente, The Netherlands
Nanolayer boron-semiconductor interfaces and their device applications

Masataka Higashiwaki
National Institute of Information and Communications Technology, Koganei, Japan
Current status of lateral and vertical Ga2O3 FET technologies

Yury Yu Illarionov
TU Wien, Wien, Austria
The discovery of new crystalline insulators for scalable 2D nanoelectronics

Tifenn Hirtzlin
CEA-Leti, Grenoble, France
From resilience to Resistive Memory variability in Binarized Neural Networks
to exploitation of variability in Bayesian Neural Network

Submission Deadlines

2-page camera ready abstracts: February 1, 2021 February 15, 2021 (23:59 Pacific Time) Notification of Acceptance: March 16, 2021 4-page papers for the SSE special issue: April 9, 2021 April 26, 2021 (23:59 Pacific Time)
Download Call for Papers
Download Abstract Template
Submit via EasyChair
4-page versions of all accepted abstracts will be published in an open special issue of Solid-State Electronics “Letters from Insulating Films on Semiconductors 2021”. Authors of selected accepted INFOS2021 papers will be invited to submit full-length (7-10 pages) papers which will be published in another special issue of Solid-State Electronics “Selected papers from Insulating Films on Semiconductors 2021”.
The Best Student Paper Award will be delivered at the end of the conference.